Storage device that restores data lost during a subsequent data write

ABSTRACT

A storage device includes a plurality of nonvolatile memories each of which includes first memory cells connected to a first word line and second memory cells connected to a second word line that is adjacent to the first word line, and a controller. The controller is configured to maintain parity data for data written in the first memory cells of the nonvolatile memories, and when carrying out data writing in the second memory cells connected to the second word line in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carrying out restoration of data that were written in the first memory cells of the targeted nonvolatile memory using the parity data.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2016-187377, filed Sep. 26, 2016, the entire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a storage device such as a semiconductor storage device.

BACKGROUND

As a device pitch of wirings formed in a nonvolatile semiconductor memory of a storage device, it becomes more difficult to maintain reliability of the storage device.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram of a semiconductor memory device according to a first embodiment.

FIG. 2 is a block diagram of a nonvolatile semiconductor memory included in the semiconductor memory device according to the first embodiment.

FIG. 3 is a perspective view of a portion of a memory cell array in the nonvolatile semiconductor memory according to the first embodiment.

FIG. 4 is a cross-sectional view of a portion of the memory cell array according to the first embodiment.

FIG. 5 is a cross-sectional view of a memory cell transistor according to the first embodiment.

FIG. 6 is a block diagram of a portion of the nonvolatile semiconductor memory according to the first embodiment.

FIG. 7 is a top-view of a portion of the memory cell array according to the first embodiment.

FIG. 8 conceptually illustrates a structure of an address according to the first embodiment.

FIG. 9 is a block diagram of a memory controller according to the first embodiment.

FIG. 10 illustrates control of data writing by the memory controller according to the first embodiment.

FIG. 11 illustrates operation of a reproduction information control unit according to the first embodiment.

FIG. 12 schematically illustrates a first example of data loss from memory cells according to the first embodiment.

FIG. 13 schematically illustrates a method of reproducing data according to the first embodiment.

FIG. 14 schematically illustrates a second example of data loss from memory cells according to the first embodiment.

FIG. 15 schematically illustrates a third example of data loss from memory cells according to the first embodiment.

FIG. 16 schematically illustrates a fourth example of data loss from memory cells according to the first embodiment.

FIG. 17 is a flow chart illustrating a procedure for reproducing data according to the first embodiment.

FIG. 18 is a timing chart illustrating generation and retention of reproduction information according to the first embodiment.

FIG. 19 schematically illustrates an operation of a reproduction information control unit according to a second embodiment.

FIG. 20 schematically illustrates a method of reproducing data according to the second embodiment.

FIG. 21 is a timing chart illustrating generation and retention of reproduction information according to the second embodiment.

DETAILED DESCRIPTION

An embodiment is directed to improving reliability of a storage device.

In general, according to an embodiment, a storage device includes a plurality of nonvolatile memories each of which includes first memory cells connected to a first word line and second memory cells connected to a second word line that is adjacent to the first word line, and a controller. The controller is configured to maintain parity data for data written in the first memory cells of the nonvolatile memories, and when carrying out data writing in the second memory cells connected to the second word line in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carrying out restoration of data that were written in the first memory cells of the targeted nonvolatile memory using the parity data. A semiconductor memory device according to embodiments will be described with reference to the drawings. In the following description, elements having the same function or configuration are described with the same reference numeral.

First Embodiment

FIG. 1 is a block diagram of a semiconductor memory device according a first embodiment.

A semiconductor memory device 100 illustrated in FIG. 1 includes a plurality of nonvolatile semiconductor memories 1 and a memory controller 18. The nonvolatile semiconductor memory 1 stores data in a nonvolatile manner. The memory controller 18 communicates with a host 200 and controls operation of the entire semiconductor memory device 100. A description of a functional block necessary for reading data from the nonvolatile semiconductor memory 1 will be omitted below.

According to the present embodiment, the host 200 is described as a computer that supports an interface conforming to NVM Express® (NVMe). However, the host 200 may be a computer that supports an interface conforming to other specifications, for example, Serial ATA (SATA) specifications or Serial Attached SCSI (SAS).

The memory controller 18, for example, is a semiconductor integrated circuit that is configured as a system on a chip (SoC).

The nonvolatile semiconductor memory 1 according to the present embodiment is a flash memory that has a structure including a plurality of memory cells that are stacked on top of one another on a semiconductor substrate, but may be a different type of memory, for example, a NAND flash memory, a NOR flash memory, a magneto resistive random access memory (MRAM), or the like.

The semiconductor memory device 100 according to the present embodiment has nonvolatile semiconductor memories 1 of four channels (Ch's). The nonvolatile semiconductor memories 1 are hereinafter expressed as nonvolatile semiconductor memories Ch0 to Ch 3. The number of channels may be greater than or smaller than 4. The memory controller 18 can write data in parallel to each channel of the nonvolatile semiconductor memories 1, and read data in parallel from each channel.

Next, a configuration of the nonvolatile semiconductor memory 1 according to the first embodiment is described with reference to FIGS. 2 to 7.

FIG. 2 is a block diagram of the nonvolatile semiconductor memory 1 according to the first embodiment. As illustrated in FIG. 2, the nonvolatile semiconductor memory 1 includes elements, such as a memory cell array 2, a sense amplifier unit 3, a page buffer 4, a row decoder 5, a column control circuit 6, a data bus 7, a column decoder 8, a serial access controller 11, an I/O interface 12, a driver 13, a voltage generation circuit 14, a sequencer 15, a command user interface 16, an oscillator 17, a control unit 19, registers 20 a and 20 b, and registers 24 a 0 to 24 e 0 and 24 a 1 to 24 e 1. The nonvolatile semiconductor memory 1, for example, is equivalent to one semiconductor chip.

The nonvolatile semiconductor memory 1 is controlled by the memory controller 18. The memory controller 18 is electrically connected to the I/O interface 12. The nonvolatile semiconductor memory 1 and the memory controller 18 transmit and receive data through the I/O interface 12.

Furthermore, the sequencer 15, the command user interface 16, and the registers 20 a and 20 b configure the control unit 19.

Each functional block can be either a piece of hardware or a piece of software, or as a combination of both. For this reason, from the perspective of these functions, a description will be generally made so that each block is apparently any of hardware and software. Furthermore, it is not indispensable to distinguish one function block from another as illustrated in a specific example in FIG. 2. For example, some functions may be performed by another functional block. Particularly, a function that is described as an example may be performed by anyone of the nonvolatile semiconductor memory 1 and the memory controller 18. Additionally, a functional block that is described as an example may be further divided into a plurality of functional sub-blocks. The present embodiment is not limited by which functional block performs a function.

Next, a structure of the entire memory cell array 2 according to the present embodiment is described.

The nonvolatile semiconductor memory 1 includes a plurality of memory cell arrays 2. Two memory cell arrays 2 are illustrated in FIG. 2, but the nonvolatile semiconductor memory 1 may include three or more memory cell arrays 2. In some cases, the memory cell array 2 is referred to as a plane. Two planes are referred to as Plane 0 and Plane 1, respectively. Each memory cell array 2 includes a plurality of memory blocks (which are hereinafter simply referred to a block). Each block has a plurality of string units. Each string unit has a plurality of strings. The details will be described with reference to FIG. 3 and other figures.

Each string includes a plurality of cell transistors that are connected to one another in series, two selection gate transistors that are formed on both ends the string, respectively, and back gate transistors. A plurality of strings is connected to one bit line. A plurality of cell transistors located at a specific position of a plurality of strings, respectively, share a word line. Cell transistors that are included in a common string unit and share the word line, or a storage space of the cell transistors configures a page. Data are read and written in units of a page. On the other hand, data are erased in units of a block. The memory cell array 2 has a three-dimensional structure. According to the present embodiment, a unit of data erasure is a block, but there is no limitation to the unit of data erasure. For example, a scheme of erasing data for every string unit or for every half a string unit may be employed.

A detailed configuration of the memory cell array 2 is described with reference to FIGS. 3 and 4. FIG. 3 is a perspective view of the memory cell array 2 according to the first embodiment. FIG. 4 is a cross-sectional diagram of a portion of the memory cell array 2 according to the first embodiment. FIG. 3 is a perspective view of a memory group that has two string units. FIG. 4 is a cross-sectional view of the portion of the memory cell array 2 along a y-z plane.

As illustrated in FIGS. 3 and 4, a back gate BG that is made of a conductive material is formed in on a substrate sub. The back gate BG extends along an x-y plane. Furthermore, a plurality of string units SU is formed in an upward direction on the substrate “sub”. A plurality of strings “String” are formed in the string unit SU. Specifically, the string unit SU includes the plurality of strings “String” that are lined up in rows in a direction (x direction in FIG. 3) that perpendicularly intersects the bit line BL. One block includes i string units, where i is a natural number. A string unit SU that includes a string “String₀” is referred to as a string unit SU₀. In the same manner, a string unit that includes a string “Stringy” is referred to as a string unit SU_(Y) (Y=1 to i−1). For the convenience of illustration, in FIG. 3, only the string unit SU₀ and a string unit SU₁ are illustrated. If there is no need to distinguish each of the reference characters (for example, strings “String₀” to “String_(i-1)”), each of which is suffixed with a number, from the others, expressions are used with the suffix numbers being omitted, and such expressions are all assumed to refer to their respective reference characters suffixed with numbers.

In FIG. 3, one string “String” includes n memory cell transistors MTr, where n is a natural number. FIGS. 3 and 4 illustrate an example in which one string includes 16 cell transistors MTr₀ to MTr₁₅. The cell transistors MTr₇ and MTr₈ are connected to each other through a back gate transistor BTr. First ends of a source side selection gate transistor SSTr and a drain side selection gate transistor SDTr are connected to cell transistors MTr₀ and MTr₁₅, respectively. A source line SL and the bit line BL extend over the transistors SSTr and SDTr, respectively. Second ends of the transistors SSTr and SDTr are connected to the source line SL and the bit line BL, respectively.

The cell transistors MTr₀ to MTr₁₅ include a semiconductor pillar SP and an insulating film IN2 (which is illustrated in FIG. 5) on a surface of the semiconductor pillar SP. The semiconductor pillar SP is made of silicon and extends in an upward direction, from the back gate BG. Two semiconductor pillar SP that configure one string “String” are connected to each other by a pipe layer that is made of a conductive material in the back gate BG. The pipe layer configures the back gate transistor BTr. The insulating film IN2, as illustrated in FIG. 5, includes a block insulating film IN2 a on the semiconductor pillar SP, a charge trapping layer IN2 b on the insulating film IN2 a, and a tunnel insulating film IN2 c on the charge trapping layer IN2 b. The charge trapping layer IN2 b is made of an insulating material.

As illustrated in FIGS. 3 and 4, the cell transistors MTr₀ to MTr₁₅ are connected to word lines (control gates) WL₀ to WL₁₅ that extend over x axis. The word lines WL₀ to WL₁₅ are selectively connected to the corresponding CG line CG (CG lines CG₀ to CG₁₅) via the row decoder 5. The CG line CG is not illustrated in FIGS. 3 and 4. The cell transistor MTr stores data that correspond to the number of carriers in the charge trapping layer IN2 b, in a nonvolatile manner.

A gate electrode (a gate) of each cell transistor MTr₀ in a plurality of strings “String₀” that are lined in rows along x axis, in each block MB, is connected commonly to the word line WL₀. In the same manner, each gate of each cell transistor MTr in a plurality of strings “String” that are lined in rows along x axis, in each block MB, is connected commonly to a word line WL_(X). X is 0 or a natural number equal to or smaller than n. Additionally, this is also true for other strings “String”. Furthermore, each gate of each cell transistor MTr_(X) in a plurality of strings “String” that are lined in rows along y axis, in each block MB, is connected commonly to the word line WL_(X). That is, the word line WL₀ is shared by all strings “String” in one block MB. In the same manner, the word lines WL₁ to WL₇ are also shared.

A plurality of strings “String” that are lined up in rows along y axis, in each block MB, is connected commonly to the bit line BL. All cell transistors MTr₀ within the block MB is connected commonly to the word line WL₀. In the same manner, all cell transistors MTr_(Z) within the block MB is connected commonly to the word line WL_(Z). Z is 0 or a natural number equal to or smaller than i. Therefore, each word line WL, as illustrated in FIG. 7, is formed in the comb-like shape.

The word line WL has a first portion WP1 in a cell region RM and a second portion WP2 in extending regions RDD and RDS. The extending region RDD and the extending region RDS are arranged to face each other. Furthermore, the cell area RM is positioned between the extending region RDD and the extending region RDS.

In each word line WL, a plurality of first portions extends in x direction from the second portion and thus the comb-like shape is formed.

Furthermore, the block MB has a feature in which the same bias is applied to all strings at the time of data erasure, and so the block MB is a unit of data erasure. A gate of each back gate transistor BTr is connected commonly to a back gate line BG.

A page is configured by the memory cell transistors MTr that are included in a common string unit SU or the storage space thereof, among a plurality of cell transistors MTr that share a word line. One page, for example, has a size of 8 k bytes. For example, if 2-bit data are retained in each cell transistor MTr, data stored in the memory cell transistors MTr included in the common string unit SU, among a plurality of cell transistors MTr that are commonly connected to the word line WL, amount to two pages.

The selection gate transistors SSTr and SDTr each include the semiconductor pillar SP and a gate insulating film (not illustrated) on the surface of the semiconductor pillar SP, and include gates (selection gate lines) SGSL and SGDL, respectively.

A gate of each source side selection gate transistor SSTr in the plurality of strings “String₀” that are lined up in rows along x axis, in each block MB, is connected commonly to a source side selection gate line SGSL₀. In the same manner, each gate of each transistor SSTr in a plurality of strings “String_(Y)” that are lined in rows along x axis, in each block MB, is connected commonly to a selection gate line SGSL_(Y). The selection gate line SGSL extends along x axis. The selection gate line SGSL is selectively connected to an SGS line SGS (not illustrated) by the row decoder 5. A first end of each transistor SSTr in two adjacent strings “String” is connected to the same source line SL. The source lines SL in one block are connected to each other.

A gate of each drain side selection gate transistor SDTr in the plurality of strings “String₀” that are lined up in rows along x axis, in each block MB, is connected commonly to a selection gate line SGDL₀. In the same manner, each gate of each transistor SDTr in a plurality of strings “String_(Y)” that are lined in rows along x axis, in each block MB, is connected commonly to a selection gate line SGDL_(Y). The selection gate lines SGDL extends along x axis. A first end of each drain-side selection gate transistor SDTr in all strings “String” in one block, which are lined up in rows along y axis, is connected to the same bit line BL.

As described above, a plurality of strings “Stringy” (that is connected to a different bit line BL) that are lined up in rows along x axis, in each block MB, share the selection gate lines SGSL and SGDL and the word lines WL₀ to WL₁₅.

Next, an entire structure of a sense amplifier unit 3, the page buffer 4, the row decoder 5, and the column control circuit 6 according to the present embodiment is described.

A set of the sense amplifier unit 3, the page buffer 4, the row decoder 5, and the column control circuit 6 is provided for every plane (every memory cell array 2). For the convenience of illustration, according to the present embodiment that exemplifies a configuration of two Planes, two row decoders 5 are expressed as row decoder 5-1 and 5-2 in FIG. 6. Each sense amplifier unit 3 includes a plurality of bit lines and a plurality of sense amplifier units that are connected individually to the plurality of bit lines, and senses and amplifies a potential of the corresponding bit line.

Based on a column address, each page buffer 4 receives data from out of the nonvolatile semiconductor memory 1 at the time of data writing, through the data bus 7, and temporarily retains the received data. The column address is supplied by the column decoder 8.

The data bus 7 is connected to the serial access controller 11. The serial access controller 11 is connected to the I/O interface 12. The I/O interface 12 includes a plurality of signal terminals, and serves as an interface between the nonvolatile semiconductor memory 1 and the memory controller 18. The serial access controller 11 performs control including conversion of a parallel signal on the data bus 7 and a serial signal through the I/O interface 12.

Each row decoder 5 receives a block address signal, and based on the received signal, selects a specific block. Specifically, each row decoder 5 connects the string unit SU in a selected block to string drivers 13STR₀ and 13STR₁ and CG drivers 13C₀ to 13C₁₅ of a driver 13. The driver 13 receives a voltage from the voltage generation circuit 14, and generates a voltage necessary for various operations (reading, writing, erasing, and the like) carried out in the nonvolatile semiconductor memory 1. A voltage that is output from the driver 13 is applied to a word line and a gate electrode of the selection gate transistor. The voltage generation circuit 14 applies a voltage necessary for operation by the sense amplifier unit 3 also to the sense amplifier unit 3.

The sequencer 15 of the control unit 19 receives a signal, such as a command or an address, from the command user interface 16, and operates based on a clock from the oscillator 17. Based on the received signal, the sequencer 15 controls various elements (functional blocks) in the nonvolatile semiconductor memory 1. For example, based on the signals, such as the received command and the received address, the sequencer 15 controls the column decoder 8 and the voltage generation circuit 14. Furthermore, based on the signals, such as the received command and the received address, the sequencer 15 outputs a block address and a string unit address. The block address varies from one plane to another, and includes information for selecting a block that varies from one plane to another or the same block. The string unit address varies from one plane to another, and includes information for selecting a string that varies from one plane to another or the same string. The command user interface 16 receives a control signal through the I/O interface 12. The command user interface 16 decodes the received control signal, and acquires the command, the address, and the like.

The nonvolatile semiconductor memory 1 may be configured so as to store data of two or more bits in one memory cell.

Next, a detailed configuration of the row decoder 5, the driver 13, and the sequencer 15 is described with reference to FIG. 6. FIG. 6 are block diagrams of a portion of the nonvolatile semiconductor memory 1 according to the first embodiment. FIG. 6 illustrate an element relating to the decoder in FIG. 2 and an element that is associated with the decoder.

For the convenience of illustration, the nonvolatile semiconductor memory 1 in FIG. 6 is illustrated as having Plane 0 and Plane 1. Furthermore, each of Planes 0 and 1 is assumed to have two blocks, that is, BLK0 and BLK1, and each block BLK is assumed to have two string units SU. The number of planes, the number of blocks BLK, and the number of string units SU are not limited to two, and may be the different number of planes, the different number of blocks, and the different number of string units, respectively.

The row decoder 5 according to the present embodiment, as illustrated in FIG. 6, has a row decoder 5-0 for Plane 0, a row decoder 5-1 for Plane 1, and selection units 31-00, 31-01, 31-10, and 31-11. The selection units 31-00 and 31-01 are for Plane 0, and the selection units 31-10 and 31-11 are for Plane 1. The row decoders 5-0 and 5-1 have the same configuration (element and connection). Furthermore, the selection units 31-00, 31-01, 31-10, and 31-11 have the same configuration. An element relating to Plane 0 will be described below. However, the following description applies also to Plane 1. The nonvolatile semiconductor memory in FIG. 6, as described with reference to FIG. 2, is equivalent to, for example, one semiconductor chip.

The driver 13 includes the string drivers 13STR₀ and 13STR₁, and the CG drivers 13C₀ to 13C₁₅. The string driver 13STR₀ has a function of selecting a string for Plane 0. The string driver 13STR₁ has a function of selecting a string for Plane 1.

The string driver 13STR₀ has two SGD drivers 13SGD₀₀ to 13SGD₀₁ and two SGS drivers 13SGS₀₀ to 13SGS₀₁. Furthermore, the string driver 13STR₁ has two SGD drivers 13SGD₁₀ to 13SGD₁₁ and two SGS drivers 13SGS₁₀ to 13SGS₁₁.

The two SGD drivers 13SGD₀₀ to 13SGD₀₁, the two SGD drivers 13SGD₁₀ to 13SGD₁₁, the two SGS drivers 13SGS₀₀ to 13SGS₀₁, the two SGS drivers 13SGS₁₀ to 13SGS₁₁, and CG line drivers 13C₀ to 13C₁₅ drive SG lines SGD₀₀ to SGD₀₁ that are connected to each block BLK in Plane 0, SG lines SGD₁₀ to SGD₁₁ that are connected to each block BLK in Plane 1, SG lines SGS₀₀ to SGS₀₁ that are connected to each block BLK in Plane 0, SG lines SGS₁₀ to SGS₁₁ that are connected to each block BLK in Plane 1, and CG lines CG₀ to CG₁₅, respectively, under the control of the sequencer 15. The driver 13 is common to Plane 0 and Plane 1. The driver 13 receives an address (which is referred to as a string unit address signal SUADD) indicating a string unit SU, from the sequencer 15. Specifically, the driver 13 receives a string unit address signal SUADD0 in Plane 0 and a string unit address signal SUADD1 in Plane 1, and controls the four SGD drivers 13SGD₀₀ to 13SGD₁₁ and the four SGS drivers 13SGS₀₀ to 13SGS₁₁.

The row decoder 5-0 includes a block address predecoder 21-0, two level shifters 22-00 to 22-01, and two transfer transistor groups 23-00 to 23-01.

The block address predecoder 21-0 is connected to the selection units 31-00 and 31-01. The selection units 31-00 and 31-01 are connected to the level shifters 22-00 and 22-01. The level shifter 22-00 is connected to a gate of each transfer transistor in the transfer transistor group 23-00. The level shifter 22-01 is connected to a gate of each transfer transistor in the transfer transistor group 23-01.

The block address predecoder 21-0 includes a block address signal BLKADD0 from the sequencer 15, and outputs a signal S0 for selecting a block BLK to the selection units 31-00 and 31-01. Any one of the transfer transistor groups 23-00 and 23-01 is selected by the selection units 31-00 and 31-01. For example, when selecting the block BLK0, an H level is applied to a gate of the transfer transistor group 23-00, and each transfer transistor in the transfer transistor group 23-00 is turned on. As a result, the word lines WL₀ to WL₁₅ in the block BLK0 are connected to the CG lines CG₀ to CG₁₅.

The CG lines CG₀ to CG₁₅ are electrically connected to the CG drivers 13C₀ to 13C₁₅ through the transfer transistor groups 23-00 to 23-01.

In Plane 0, an SG line SGDL_(D) in the string unit SU₀ in each block BLK is electrically connected to the SGD driver 13SGD₀₀ through the transfer transistor groups 23-00 to 23-01. In Plane 0, an SG line SGSL_(D) in the string unit SU₀ in each block BLK is electrically connected to the SGS driver 13SGS₀₀ through the transfer transistor groups 23-00 to 23-01. In Plane 0, an SG line SGDL₁ in the string unit SU₁ in each block BLK is electrically connected to the SGD driver 13SGD₀₁ through the transfer transistor groups 23-00 to 23-01. In Plane 0, an SG line SGSL₁ in the string unit SU₁ in each block BLK is electrically connected to the SGS driver 13SGS₀₁ through the transfer transistor groups 23-00 to 23-01.

Next, operations of the control unit 19 according to the present embodiment are described.

The control unit 19 has a function of controlling operations of the entire nonvolatile semiconductor memory 1. The control unit 19 includes the sequencer 15, the command user interface 16, the registers 20 a and 20 b, and the registers 24 a 0 to 24 d 0 and 24 a 1 to 24 d 1.

Based on a command and an address that is supplied from the command user interface 16, the sequencer 15 performs an operation sequence for a data writing operation, a data reading operation, and a data erasure operation.

In order to perform the operation sequence, the sequencer controls operation of each block of the nonvolatile semiconductor memory 1. As illustrated in FIG. 6, the sequencer 15 supplies a block address signal BLKADD0 to the block address predecoder 21-0 in Plane 0, supplies a block address signal BLKADD1 to a block address predecoder 21-1 in Plane 1, and supplies the string unit address signals SUADD0 and SUADD1 to the driver 13.

During the data writing operation, the data reading operation, and the like, a command, data, and an address are supplied to the nonvolatile semiconductor memory 1 from the outside through the I/O interface 12. An example of an address according to the present embodiment is described with FIG. 8.

FIG. 8 conceptually illustrates a structure of an address according to the present embodiment.

As illustrated in FIG. 8, the sequencer 15 sequentially receives a lower-level/higher-level page address (L/U), a word line address (WL Address), a string unit address (SU Address), and a block address (Block Address).

As illustrated in FIG. 6, the sequencer 15 supplies the bock address signals BLKADD0 and the BLKADD1 to the block address predecoder 21-0 and 21-1, respectively. Furthermore, the sequencer 15 supplies the string unit address signals SUADD0 and SUADD1 and a word line address signal WLA to the driver 13. At this point, the signal SUADD0 is supplied to Plane 0, and the signal SUADD1 is supplied to Plane 1. In the same manner, the signal BLKADD0 is supplied to Plane 0, and the signal BLKADD1 is supplied to Plane 1. Details will be described below.

A word line address signal WLADD is assumed to use a word line address signal that is common to a plurality of planes. Moreover, the word line address signal WLADD may be set to be common between the plurality of planes, and the same word line WL may be set to be selected commonly for the plurality of planes. Furthermore, the word line address signal WLADD may be set to be changed for every plane and the word line WL that varies from one plane to another may be set to be selected.

The block address predecoder 21-0 receives the block address signal BLKADD0 from the sequencer 15. The block address signal BLKADD0 includes information for selecting a specific block from the memory cell array 2 in Plane 0. The block address predecoder 21-0 decodes the block address signal BLKADD0, and outputs the signal S0 to the selection units 31-00 and 31-01 so that a specific block BLK is selected. At this point, the signal S0 is a signal for selecting any block BLK in Plane 0.

For example, if the block BLK0 is selected, the transfer transistor group 23-00 is turned on through the selection units 31-00 and 31-01, the level shifters 22-00 and 22-01.

The level shifter 22-00 receives a necessary voltage VRDEC from the selection unit 31-00. The selection unit 31-00 receives a necessary voltage from a voltage generation circuit 14, and generates the voltage VRDEC. The selection unit 31-00, for example, is configured as a portion of a function of the voltage generation circuit 14, and is included in the voltage generation circuit 14.

The sequencer 15 supplies the string unit address signal SUADD0 to the string driver 13STR₀, supplies the word line address signal WLADD to the CG drivers 13C₀ to 13C₁₅, and selects a specific string unit SU and a specific word line WL. The string unit address signal SUADD0 includes information for selecting a specific string unit SU from the memory cell array 2 in Plane 0.

For example, if the string unit SU₀ in the block BLK0 is selected, an H level is transmitted to the SG lines SGSL_(D) and SGDL₀, and transmits an L level to the SG lines SGSL₁ and SGDL₁ that correspond to a different string unit SU₁.

As a result, a selection gate transistor in the string unit SU₀ is turned on, and a selection gate transistor in the string unit SU₁ is turned off.

As described above, this is true for Plane 1 except for the following one respect. That is, the block address predecoder 21-1 for Plane 1 receives the block address signal BLKADD1. The block address signal BLKADD1 includes information for selecting a specific block from the memory cell array 2 in Plane 2. The block address predecoder 21-1 decodes the block address signal BLKADD1, and outputs a signal S1 to the selection units 31-10 and 31-11 so that a specific block BLK is selected. At this point, the signal S1 is a signal for selecting any block BLK in Plane 1.

The sequencer 15 supplies a string unit address signal SUADD1 to a string driver 13STR₁, supplies the word line address signal WLADD to the CG drivers 13C₀ to 13C₁₅, and selects a specific string unit SU and a specific word line WL. At this point, the string unit address signal SUADD1 includes information for selecting a specific string unit SU from the memory cell array 2 in Plane 1.

For example, if the string unit SU₀ in the block BLK0 is selected, an H level is transmitted to the SG lines SGSL_(D) and SGDL₀, and transmits an L level to the SG lines SGSL₁ and SGSL₁ that correspond to a different string unit SU₁.

As a result, the selection gate transistor in the string unit SU₀ is turned on, and the selection gate transistor in the string unit SU₁ is turned off.

The block address signal BLKADD1 is different from the block address signal BLKADD0, and the string unit address signal SUADD0 is different from the string unit address signal SUADD1. For that reason, the string unit SU that is selected in the Plane 0 and the string unit SU that is selected in Plane 1 are independent of each other. Moreover, according to the present embodiment, the block address signals BLKADD0 and BLKADD1 are different from each other, and the string unit address signals SUADD0 and SUADD1 are different from each other, but there is no limitation to contents of these signals. For example, the string unit address signal SUADD0 and the string unit address signal SUADD1 may be the same.

The above describes the nonvolatile semiconductor memory 1 that has two planes. However, a nonvolatile semiconductor memory having three or more Planes can also be configured based on the principle described above.

Next, a configuration of the memory controller 18 according to the present embodiment is described with reference to FIG. 9.

The memory controller 18 includes a host interface (IF) control unit 300, a buffer control unit 304, a memory writing control unit 306, a logical/physical conversion table 308, and a Central Processing Unit (CPU) 310.

The host IF control unit 300 performs interpretation or execution of a command that is received from the host 200. The buffer control unit 304 performs control or the like of a buffer 302. The memory writing control unit 306 controls writing of data to the nonvolatile semiconductor memory 1. The logical/physical conversion table 308 performs mapping between a logical address that is designated in a command from the host 200 and a physical address of the nonvolatile semiconductor memory 1. The CPU 310 performs control of the entire semiconductor memory device 100 based on firmware (FW).

The buffer 302 according to the present embodiment is a memory of Static Random Access Memories (SRAMs), but different types of memories, such as Dynamic Random Access Memories (DRAMs), may be employed for the buffer 302.

The memory writing control unit 306 includes a memory interface (IF) control unit 312 (which, in some cases, is hereinafter expressed as memory IF control units Ch0 to Ch3) that is connected to each of the nonvolatile semiconductor memory channels Ch0 to Ch3, an interleaving control unit 314, a reproduction information control unit 316, and a reproduction information storage unit 318.

The memory IF control unit 312 controls an operation of writing data to the nonvolatile semiconductor memory 1, operations of reading and erasing data from the nonvolatile semiconductor memory 1, and the like. The interleaving control unit 314 transfers data read from the buffer 302, to each memory IF control unit 312. The reproduction information control unit 316 generates and manages reproduction information for being able to reproduce data written to the nonvolatile semiconductor memory 1. The reproduction information storage unit 318 stores (retains) the reproduction information. The reproduction information will be described below. The reproduction information may be stored in the buffer 302.

The memory control unit 312 has a function of attaching an error correction code to data written to the nonvolatile semiconductor memory 1 and performing an error correction on data read from the nonvolatile semiconductor memory 1. That is, the memory IF control unit 312 includes an error correction code (ECC) control unit.

The buffer 302 and the CPU 310 may be configured as a separate semiconductor integrated circuit, without being built into the memory controller 18. Furthermore, it is possible that some or all of the functions which, in the following description, are performed in accordance with the FW may be performed also by dedicated hardware (HW), and it is possible that some or all of the functions which are performed by HW may be performed in accordance with the FW.

Next, control of writing of data to the nonvolatile semiconductor memory 1 by the memory controller 18 is described with reference to FIG. 10.

In FIG. 10, each nonvolatile semiconductor memory 1 includes two Planes (Plane 0 and Plane 1). Each Plane includes a plurality of blocks. Each block includes four string units (SU₀ to SU₃).

The memory controller 18 controls the writing of data, collectively for memory cells included in the common string unit SU, among memory cells that share the word line WL, as one unit. This unit is hereinafter referred to as a WLSU. The WLSU includes a plurality of pages.

A time period for writing (programming) data to the memory cells of the nonvolatile semiconductor memory 1 is longer than a time period for transferring data from the memory controller 18 to the nonvolatile semiconductor memory 1 (more specifically to the page buffer 4). For this reason, the memory controller 18 transfers data to a different nonvolatile semiconductor memory 1 during the time period (tProg) for writing data to memory cells of one nonvolatile semiconductor memory 1, and thus improves writing performance of the entire semiconductor memory device 100. Within each nonvolatile semiconductor memory 1, data are written at the same time to memory cells of each of Plane 0 and Plane 1 that share the driver 13.

According to the present embodiment, the memory controller 18 first writes data for a WLSU (WL₀, SU₀) within each block and next writes data for a WLSU (WL₀, SU₁). Thereafter, the memory controller 18 sequentially writes pieces of data for (WL₀, SU₂), (WL₀, SU₃), (WL₁, SU₀), (WL₁, SU₂), and so forth. WLSUs that are illustrated in FIG. 10 are sequentially numbered in the order in which data are written. For example, Plane 0, Block A, and WLSU (WL₁, SU₁) in the nonvolatile semiconductor memory Ch0 will be expressed below as [Ch0, Plane 0, Block A, WLSU #6].

Data are written at the same time to WLSUs that have the same number. That is, data are written at the same time to a total of eight WLSUs in Plane 0 and Plane 1 of each of the four nonvolatile semiconductor memories 1.

The control unit 19 checks whether or not data received from the memory controller 18 are correctly programmed to memory cells (program verification). A result of the program verification is saved, for example, in the register 20 a. The memory controller 18 can know whether or not the writing of data to the memory cells of the nonvolatile semiconductor memory 1 fails, by reading the result of the program verification.

Next, operation of the reproduction information control unit 316 is described with reference to FIG. 11.

The reproduction information control unit 316 generates the reproduction information for being able to reproduce data that are written to each nonvolatile semiconductor memory 1. The reproduction information control unit 316 generates the reproduction information by performing an exclusive OR (XOR) operation for every Plane on the data written to each WLSU. The generated reproduction information is stored in the reproduction information storage unit 318 before each piece of data is transferred to each nonvolatile semiconductor memory 1.

In FIG. 11, the XOR operation is performed on data written to [Ch0, Plane 0, Block A, WLSU #6], data written to [Ch1, Plane 0, Block C, WLSU #6], data written to [Ch2, Plane 0, Block E, WLSU #6], and data written to [Ch3, Plane 0, Block G, WLSU #6], and then the reproduction information Parity 1 (Plane 0, WLSU #6) is generated. Furthermore, the XOR operation is performed on data written to [Ch0, Plane 1, Block B, WLSU #6], data written to [Ch1, Plane 1, Block D, WLSU #6], data written to [Ch2, Plane 1, Block F, WLSU #6], and data written to [Ch3, Plane 1, Block H, WLSU #6], and then the reproduction information Parity 1 (Plane 1, WLSU #6) is generated.

Recently, there is an advance in breaking a process of manufacturing the nonvolatile semiconductor memory 1 into sub-processes. As a result, when writing data to a memory cell, there is an increased concern that electric discharge and like will occur between word lines and thus a short circuit will occur between two adjacent word lines. A range of memory cells, in which there is a likelihood that data will be lost when the short circuit occurs between the word lines, is described with reference to FIG. 12. Moreover, the short circuit will be described below as occurring between word lines that are adjacent to each other. However, the following description can apply also to a case where the short circuit occurs between word lines that are not adjacent to each other.

In FIG. 12, it is assumed that, after valid data are written to memory cells WLSU #1 to WLSU #5, when data are written to a memory cell WLSU #6, the short circuit occurs between WL₀ and WL₁ in Plane 0 in Black A in the nonvolatile semiconductor memory Ch0. At this time, there is a likelihood that the short circuit occurs in memory cells, [Ch0, Plane 0, Block A, WLSU #1] to [Ch0, Plane 0, Block A, WLSU #5] and thus data are lost. Furthermore, there is a likelihood that the writing of data to a memory cell, [Ch0, Plane 0, Block A, WLSU #6] fail. There is a likelihood that the short circuit will occur also in memory cells [Ch0, Plane 0, Block A, WLSU #7] to [Ch0, Plane 0, Block A, WLSU #8], but effective data has not yet to be written to these memory cells WLSUs.

Additionally, there is a likelihood that the writing of data to a memory cell [Ch0, Plane 1, Block B, WLSU #6] fails, to which data are to be written at the same time as data are written to the memory cell [Ch0, Plane 0, Block A, WLSU #6] fails as well. As described above, each Plane shares the driver 13. The driver 13 has the capability to drive two word lines (for example, WL₁ in Block A in Plane 0 and WL₁ in Block B in Plane 1). However, this is because, when the short circuit occurs between WL₀ and WL₁ in Plane 0 and Block A, the driver 13 has to drive three word lines, WL₀ and WL₁ in Block A in Plane 0 and WL₁ in Block B in Plane 1, and the capability to drive is insufficient.

The loss of data within Plane in which the short circuit occurs between word lines and the failure of the writing of data ([Ch0, Plane 0, Block A, WLSU #1] to [Ch0, Plane 0, Block A, WLSU #6] in FIG. 12) are referred to as a first issue, and the failure of writing data within Plane in which the short circuit does not occur between word lines ([Ch0, Plane 1, Block B, WLSU #6] in FIG. 12) is referred to as a second issue.

Next, a method of reproducing data using the reproduction information is described with reference to FIG. 13.

In FIG. 13, as in FIG. 12, it is assumed that, after valid data are written to the memory cells WLSU #1 to WLSU #5, when data are written to the memory cell WLSU #6, the short circuit occurs between WL₀ and WL₁ in Plane 0 in Black A in the nonvolatile semiconductor memory Ch0. In FIG. 13, a mark X is given to only [Ch0, Plane 0, Block A, WLSU #1]. However, as described above, the first issue occurs in [Ch0, Plane 0, Block A, WLSU #1] to [Ch0, Plane 0, Block A, WLSU #6].

First, reproduction of data in [Ch0, Plane 0, Block A, WLSU #1], which has a likelihood of being lost due to the first issue is described.

When the writing of data to [Ch0, Plane 0, Block A, WLSU #6] failed, the memory controller 18 reads data from [Ch0, Plane 0, Block A, WLSU #1] that is connected to an adjacent word line (WL₀). As a result of reading the data, the memory controller 18 recognizes that the data in [Ch0, Plane 0, Block A, WLSU #1] cannot be correctly read, that is, that the data are lost.

At this time, the memory controller 18 reads pieces of data from [Ch1, Plane 0, Block C, WLSU #1], [Ch2, Plane 0, Block E, WLSU #1], and [Ch3, Plane 0, Block G, WLSU #1]. Additionally, the memory controller 18 reads the reproduction information Parity 1 (Plane 0, WLSU #1) from the reproduction information storage unit 318. Then, each piece of data and the reproduction information that are read are stored, for example, in a buffer 302. Then, the memory controller 18 reproduces data in [Ch0, Plane 0, Block A, WLSU #1] by performing the XOR operation on the data and the reproduction information that are read and stored in the buffer 302.

The reproduced data are written to another WLSU (for example, [Ch0, Plane 0, Block A, WLSU #9]), other than [Ch0, Plane 0, Block A, WLSU #1]. Information on the WLSU to which data are written is recorded in the logical/physical conversion table 308.

In the same manner, the memory controller 18 reproduces pieces of data of [Ch0, Plane 0, Block A, WLSU #2] to [Ch0, Plane 0, Block A, WLSU #6].

Next, reproduction of data in [Ch0, Plane 1, Block B, WLSU #6], in which there is a likelihood that the writing of data fails due to the second issue, is described.

When the writing of data to [Ch0, Plane 0, Block A, WLSU #6] failed, the memory controller 18 reads data from [Ch0, Plane 1, Block B, WLSU #6] in different Plane that shares the driver 13. As a result of reading the data, the memory controller 18 recognizes that the data in [Ch0, Plane 1, Block B, WLSU #6] cannot be correctly read, that is, that the writing of the data failed.

At this time, the memory controller 18 reads pieces of data from [Ch1, Plane 1, Block D, WLSU #6], [Ch2, Plane 1, Block F, WLSU #6], and [Ch3, Plane 1, Block H, WLSU #6]. Additionally, the memory controller 18 reads the reproduction information Parity 1 (Plane 1, WLSU #6) from the reproduction information storage unit 318. Then, each piece of data and the reproduction information that are read are stored, for example, in the buffer 302. Then, the memory controller 18 reproduces the data in [Ch0, Plane 1, Block B, WLSU #6] by performing the XOR operation on the data and the reproduction information that are read and stored in the buffer 302.

The reproduced data are written to another WLSU (for example, [Ch0, Plane 1, Block B, WLSU #10]), other than [Ch0, Plane 1, Block B, WLSU #6]. Also, information on the WLSU to which data are written is recorded in the logical/physical conversion table 308.

Here, the reproduction information may not be generated based on data that are written to each WLSU of the nonvolatile semiconductor memory 1 in a different channel. That is, although data are written to a WLSU of the nonvolatile semiconductor memory 1 in the same channel, this WLSU may be a WLSU that belongs to a word line on which the first issue and the second issue have no influence. Furthermore, a type of operation for generating the reproduction information is not limited to the exclusive OR. Additionally, the reproduction information may be data (user data) itself that are written to each nonvolatile semiconductor memory 1.

FIG. 14 illustrates another example of memory cells, in which data may be lost when the short circuit occurs between two adjacent word lines.

In FIG. 14, it is assumed that, after valid data are written to memory cells WLSU #1 to WLSU #7, when data are written to a memory cell WLSU #8, the short circuit occurs in WL₀ to WL₁ in Plane 0 in Block A in the nonvolatile semiconductor memory Ch0.

At this time, there is a likelihood that pieces of data in [Ch0, Plane 0, Block A, WLSU #1] to [Ch0, Plane 0, Block A, WLSU #7] are lost due to the first issue. Furthermore, there is a likelihood that the writing of data to [Ch0, Plane 0, Block A, WLSU #8] fails due to the first issue. Additionally, there is a likelihood that the writing of data to [Ch0, Plane 1, Block B, WLSU #8] fails due to the second issue. FIG. 14 illustrates a case where the number of WLSUs in which data may be lost due to the first issue is the greatest.

FIG. 15 illustrates another example of memory cells, in which data may be lost when the short circuit occurs between two adjacent word lines.

In FIG. 15, it is assumed that, after valid data are written to the memory cells WLSU #1 to WLSU #5, when data are written to the memory cell WLSU #6, the short circuit occurs between WL₁ and WL₂ in Plane 0 in Block A in the nonvolatile semiconductor memory Ch0. That is, in FIG. 15, it is assumed that the short circuit occurs in a word line connected to memory cells to which data are going to be written and a word line connected to memory cells to which valid data has not yet to be written.

At this time, there is a likelihood that data in [Ch0, Plane 0, Block A, WLSU #5] are lost due to the first issue. Furthermore, there is a likelihood that the writing of data to [Ch0, Plane 0, Block A, WLSU #6] fails due to the first issue. Additionally, there is a likelihood that the writing of data to [Ch0, Plane 1, Block B, WLSU #6] fails due to the second issue.

FIG. 16 illustrates another example of memory cells, in which data may be lost when the short circuit occurs between two adjacent word lines.

In FIG. 15, it is assumed that, after valid data are written to memory cells WLSU #1 to WLSU #4, when data are written to the memory cell WLSU #5, the short circuit occurs between WL₁ and WL₂ in Plane 0 in Block A in the nonvolatile semiconductor memory Ch0.

At this time, there is no WLSU in which data may be lost due to the first issue. Furthermore, there is a likelihood that the writing of data to [Ch0, Plane 0, Block A, WLSU #5] fails due to the first issue. Additionally, there is a likelihood that the writing of data to [Ch0, Plane 1, Block B, WLSU #5] fails due to the second issue.

Next, a procedure in which the memory controller 18 reproduces data when the writing of data fails is described with reference to FIG. 17.

When the writing of data to a memory cell WLSU fails (S100), the memory controller 18 reproduces the data, using data read from the nonvolatile semiconductor memory 1 in a different channel and the reproduction information parity 1 (S101). The memory controller 18 writes the reproduced data to a WLSU other than the WLSU, at which the writing failed (S101).

Next, the memory controller 18 reads pieces of data from different WLSU that belongs to a word line connected to the memory cell on which data writing failed, and a WLSU connected to a word line that is adjacent to such a word line (S102). If read data include an error (Yes in S103), that is, if the data are lost due to the first issue, the memory controller 18 reproduces data of the WLSU and writes the reproduced data to another WLSU (S104).

Next, the memory controller 18 reads data from a WLSU in different Plane that corresponds to the WLSU to which the memory cell, the writing of data to which fails, belongs (S105). If read data include an error (Yes in S106), that is, if the writing of data fails due to the second issue, the memory controller 18 reproduces data of the WLSU and writes the reproduced data to another WLSU (S107).

Here, each of Steps S102, S103, S105 and S106 may be omitted. That is, the memory controller 18 may reproduce the data whether or not the data are lost and whether or not the writing of data fails. Furthermore, if it is determined that the memory cell, the WLSU in which the loss of the data or the failure of the writing of data occurs is not physically destroyed, the memory controller 18 may write the reproduced data to the same WLSU, in each of Steps S101 and S104, and S107.

Next, a timing of generation and retention of the reproduction information Parity 1 is described with reference to FIG. 18. In FIG. 18, for example, the reproduction information Parity 1 (Plane 0, WLSU #1) is referred to as Parity 1 (Plane 0, WL₀, SU₀). Furthermore, an illustration of the reproduction information Parity 1 relating to Plane 1 is omitted. Additionally, the time required for transferring data from the memory controller 18 to each nonvolatile semiconductor memory 1 is also omitted.

At time T0, (WL₀, SU₀), data to be written to WLSU #1 are transferred from the memory controller 18 to each nonvolatile semiconductor memory 1. At this time, the memory controller 18 generates the reproduction information Parity 1 (Plane 0, WL₀, SU₀) and the reproduction information Parity 1 (Plane 1, WL₀, SU₀) and stores these pieces of generated reproduction information in the reproduction information storage unit 318.

At time T1, (WL₀, SU₁), data to be written to WLSU #2 are transferred from the memory controller 18 to each nonvolatile semiconductor memory 1. At this time, the memory controller 18 generates the reproduction information Parity 1 (Plane 0, WL₀, SU₁) and the reproduction information Parity 1 (Plane 1, WL₀, SU₁), and stores these pieces of generated reproduction information in the reproduction information storage unit 318.

At time T2, (WL₀, SU₂), data to be written to WLSU #3 are transferred from the memory controller 18 to each nonvolatile semiconductor memory 1. At this time, the memory controller 18 generates the reproduction information Parity 1 (Plane 0, WL₀, SU₂) and the reproduction information Parity 1 (Plane 1, WL₀, SU₂) and stores these pieces of generated reproduction information in the reproduction information storage unit 318.

At time T3, (WL₀, SU₃), data to be written to WLSU #4, are transferred from the memory controller 18 to each nonvolatile semiconductor memory 1. At this time, the memory controller 18 generates the reproduction information Parity 1 (Plane 0, WL₀, SU₃) and the reproduction information Parity 1 (Plane 1, WL₀, SU₃) and stores these pieces of generated reproduction information in the reproduction information storage unit 318.

In the same manner, during time T4 to T5, pieces of data that are to be written to (WL₁, SU₀) to (WL₁, SU₃) are transferred from the memory controller 18 to each nonvolatile semiconductor memory 1. During this time period, the memory controller 18 generates the reproduction information Parity 1 (Plane 0, WL₁, SU₀) to the reproduction information Parity 1 (Plane 0, WL₁, SU₃), and the reproduction information Parity 1 (Plane 1, WL₁, SU₀) to the reproduction information Parity 1 (Plane 1, WL₁, SU₃) and stores these pieces of generation reproduction information in the reproduction information storage unit 318.

At time T6, the writing of data to WL₁ within each nonvolatile semiconductor memory 1 is completed. At this time, because the data in WL_(D) will not be lost due to the first issue and the second issue, the memory controller 18 can delete the reproduction information Parity 1 (Plane 0, WL₀, SU₀) to the reproduction information Parity 1 (Plane 0, WL₀, SU₃), and the reproduction information Parity 1 (Plane 1, WL₀, SU₀) to the reproduction information Parity 1 (Plane 1, WL₀, SU₃) from the reproduction information storage unit 318.

In the same manner, at time T7, the writing of data to WL₂ within each nonvolatile semiconductor memory 1 is completed. At this time, because the data in WL₁ will not be lost due to the first issue and the second issue, the memory controller 18 can delete the reproduction information Parity 1 (Plane 0, WL₁, SU₀) to the reproduction information Parity 1 (Plane 0, WL₁, SU₃), and the reproduction information Parity 1 (Plane 1, WL₁, SU₀) to the reproduction information Parity 1 (Plane 1, WL₁, SU₃) from the reproduction information storage unit 318.

According to the semiconductor memory device according to the first embodiment, when the short circuit occurs between two adjacent word lines and loss of data or failure of data writing occurs, because the data can be reproduced, reliability of the semiconductor memory device can be improved.

Second Embodiment

The semiconductor memory device according to the first embodiment generates the reproduction information Parity 1 for every Plane. In contrast, a semiconductor memory device according to a second embodiment generates one piece of reproduction information Parity 2 from two pieces of reproduction information Parity 1.

FIG. 19 illustrates an operation of the reproduction information control unit 316 according to the present embodiment.

In FIG. 19, similarly to FIG. 11, the XOR operation is performed on the data written to [Ch0, Plane 0, Block A, WLSU #6], the data written to [Ch1, Plane 0, Block C, WLSU #6], the data written to [Ch2, Plane 0, Block E, WLSU #6], and the data written to [Ch3, Plane 0, Block G, WLSU #6]. Then, the reproduction information Parity 1 (Plane 0, WLSU #6) is generated. Furthermore, the XOR operation is performed on the data written to [Ch0, Plane 1, Block B, WLSU #6], the data written to [Ch1, Plane 1, Block D, WLSU #6], the data written to [Ch2, Plane 1, Block F, WLSU #6], and the data written to [Ch3, Plane 1, Block H, WLSU #6]. Then, the reproduction information Parity 1 (Plane 1, WLSU #6) is generated.

The reproduction information control unit 316 according to the present embodiment further performs the XOR operation on the reproduction information Parity 1 (Plane 0, WLSU #6) and the reproduction information Parity 1 (Plane 1, WLSU #6), and then generates the reproduction information Parity 2 (Plane 0+1, WLSU #6). Here, it is possible that the reproduction information Parity 2 (Plane 0+1, WLSU #6) is generated directly also by the XOR operation on pieces of data that are written to [Ch0, Plane 0, Block A, WLSU #6] to [Ch0, Plane 1, Block H, WLSU #6], not from the reproduction information Parity 1.

Next, a method of reproducing data using the reproduction information is described with reference to FIG. 20.

In FIG. 20, as in FIG. 13, it is assumed that, after valid data are written to the memory cells WLSU #1 to WLSU #5, when data are written to the memory cell WLSU #6, the short circuit occurs between WL₀ and WL₁ in Plane 0 in Block A in the nonvolatile semiconductor memory Ch0.

First, the reproduction of data in [Ch0, Plane 0, Block A, WLSU #1], which may be lost due to the first issue, is described.

In reproducing data in [Ch0, Plane 0, Block A, WLSU #1], the memory controller 18 reads pieces of data from [Ch1, Plane 0, Block B, WLSU #1] to [Ch3, Plane 1, Block H, WLSU #1]. Additionally, the memory controller 18 reads the reproduction information Parity 2 (Plane 0+1, WLSU #1) from the reproduction information storage unit 318. Each piece of data and the reproduction information that are read are stored, for example, in the buffer 302. Then, the memory controller 18 can reproduce data in [Ch0, Plane 0, Block A, WLSU #1] by performing the XOR operation on the data and the reproduction information.

In the same manner, the memory controller 18 can reproduce the pieces of data of [Ch0, Plane 0, Block A, WLSU #2] to [Ch0, Plane 0, Block A, WLSU #6].

Reproduction of data in [Ch0, Plane 1, Block B, WLSU #6], of which writing may fail due to the second issue, is the same as in the case of FIG. 13. That is, the memory controller 18 can reproduce data in [Ch0, Plane 1, Block B, WLSU #6] using data in [Ch1, Plane 1, Block D, WLSU #6], data in [Ch2, Plane 1, Block F, WLSU #6], data in [Ch3, Plane 1, Block H, WLSU #6], and the reproduction information Parity 1 (Plane 1, WLSU #6).

A timing of generation and storing of the reproduction information Parity 1 and the reproduction information Parity 2 is described with reference to FIG. 21. Similarly to FIG. 18, in FIG. 21, the reproduction information Parity 1 relating to Plane 1 is also omitted.

In the same manner as in FIG. 18, during time T0 to T3, pieces of data that are to be written to (WL₀, SU₀) to (WL₀, SU₃) are transferred from the memory controller 18 to each nonvolatile semiconductor memory 1. At this time, the memory controller 18 generates the reproduction information Parity 1 (Plane 0, WL₀, SU₀) to the reproduction information Parity 1 (Plane 0, WL₀, SU₃), and the reproduction information Parity 1 (Plane 1, WL₀, SU₀) to the reproduction information Parity 1 (Plane 1, WL₀, SU₃) and stores these pieces of generation reproduction information in the reproduction information storage unit 318.

At time T4, the writing of data to (WL₀, SU₀) in each nonvolatile semiconductor memory 1 is completed. At this time, because writing of data in (WL₀, SU₀)h will not fail due to the second issue, the memory controller 18 can generate the reproduction information Parity 2 (Plane 0+1, WL₀, SU₀) from the reproduction information Parity 1 (Plane 0, WL₀, SU₀) and the reproduction information Parity 1 (Plane 1, WL₀, SU₀), and stores the generated reproduction information Parity 2 in the reproduction information storage unit 318. Then, the memory controller 18 can delete the reproduction information Parity 1 (Plane 0, WL₀, SU₀) and the reproduction information Parity 1 (Plane 1, WL₀, SU₀) from the reproduction information storage unit 318.

The capacity of the reproduction information storage unit 318 can be reduced, as compared with the first embodiment, by deleting two pieces of reproduction information Parity 1 and storing one piece of reproduction information Parity 2.

In the same manner, at time T5, the writing of data to (WL₀, SU₁) in each nonvolatile semiconductor memory 1 is completed. At this time, because writing of the data in (WL₀, SU₁) will not fail due to the second issue, the memory controller 18 can generate the reproduction information Parity 2 (Plane 0+1, WL₀, SU₁) from the reproduction information Parity 1 (Plane 0, WL₀, SU₁) and the reproduction information Parity 1 (Plane 1, WL₀, SU₁), and stores the generated reproduction information Parity 2 in the reproduction information storage unit 318. Then, the memory controller 18 can delete the reproduction information Parity 1 (Plane 0, WL₀, SU₁) and the reproduction information Parity 1 (Plane 1, WL₀, SU₁) from the reproduction information storage unit 318.

In the same manner, during time T6 to time T8, the memory controller 18 can generate the Parity 2 from the Parity 1 that corresponds to a WLSU in which the second issue will not occur, and can delete the unnecessary Parity 1 from the reproduction information storage unit 318.

With the semiconductor memory device according to the second embodiment, which is described above, because two pieces of reproduction information Parity 1 are deleted and one piece of reproduction information Parity 2 is generated, the capacity of the reproduction information storage unit can be reduced and the reliability of the semiconductor memory device can be improved.

With the semiconductor memory device according to at least one embodiment, when the short circuit occurs between two adjacent word lines and the loss of data or the failure of the writing of data occurs, because the data can be reproduced, the reliability of the semiconductor memory device can be improved.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. Indeed, the novel embodiments described herein may be embodied in a variety of other forms; furthermore, various omissions, substitutions and changes in the form of the embodiments described herein may be made without departing from the spirit of the inventions. The accompanying claims and their equivalents are intended to cover such forms or modifications as would fall within the scope and spirit of the inventions. 

What is claimed is:
 1. A storage device comprising: a plurality of nonvolatile memories each of which includes first memory cells connected to a first word line and second memory cells connected to a second word line that is adjacent to the first word line; and a controller configured to maintain parity data for data written in the first memory cells of the nonvolatile memories, and when carrying out data writing in the second memory cells connected to the second word line in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carry out restoration of data that were written in the first memory cells of the targeted nonvolatile memory using the parity data.
 2. The storage device according to claim 1, wherein the controller carries out the restoration also using data that were written in the first memory cells of the plurality of nonvolatile memories other than the target nonvolatile memory.
 3. The storage device according to claim 1, wherein the controller is further configured to write data restored through the restoration in memory cells connected to a third word line different from the first and second word lines in the targeted nonvolatile memory.
 4. The storage device according to claim 1, wherein the controller is further configured to generate the parity data by performing an exclusive OR operation of the data written in the first memory cells of the nonvolatile memories.
 5. The storage device according to claim 1, further comprising: a volatile memory, wherein the controller maintains the parity data in the volatile memory.
 6. A storage device comprising: a plurality of nonvolatile memories each of which includes a first memory cell array and a second memory cell array, each memory cell array including first memory cells connected to a first word line and second memory cells connected to a second word line that is adjacent to the first word line; and a controller configured to maintain parity data for data written in the first memory cells in the first memory cell arrays of the nonvolatile memories, and when carrying out data writing in the second memory cells of the first memory cell array in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carry out restoration of data that were written in the first memory cells of the first memory cell arrays of the target nonvolatile memory using the parity data.
 7. The storage device according to claim 6, wherein the controller carries out the restoration also using data that were written in the first memory cells of the first memory cell arrays in the plurality of nonvolatile memories other than the target nonvolatile memory.
 8. The storage device according to claim 6, wherein the controller is further configured to write data restored through the restoration in memory cells connected to a third word line different from the first and second word lines in the targeted nonvolatile memory.
 9. The storage device according to claim 6, wherein the controller is further configured to generate the parity data by performing an exclusive OR operation on the data that are written in the first memory cells in the first memory cell arrays of the nonvolatile memories.
 10. The storage device according to claim 6, wherein the controller is further configured to generate the parity data by performing an exclusive OR operation on the data that are written in the first memory cells in the first memory cell arrays of the nonvolatile memories, and an exclusive OR operation on data that are written in the first memory cells in the second memory cell arrays of the nonvolatile memories.
 11. The storage device according to claim 10, wherein the controller generates the parity data by performing an exclusive OR operation on results of the exclusive OR operations.
 12. The storage device according to claim 6, further comprising: a volatile memory, wherein the controller maintains the parity data in the volatile memory.
 13. The storage device according to claim 6, wherein the controller is further configured to generate second parity data for data written in the second memory cells in the second memory cell arrays of the nonvolatile memories, carry out data reading from the second memory cells connected in the second memory cell array of the target nonvolatile memory, upon detecting the failure of the data writing therein, and carry out second restoration of data that were written in the second memory cells in the second memory cell array of the target nonvolatile memory using the second parity information upon detecting a failure in the data reading.
 14. The storage device according to claim 13, wherein the controller carries out the second restoration also using data that were written in the second memory cells in the second memory cell arrays of the plurality of nonvolatile memories other than the target nonvolatile memory.
 15. The storage device according to claim 13, wherein the controller is further configured to write data restored through the second restoration based on the second parity data, in memory cells connected to a third word line different from the first and second word lines in the target nonvolatile memory.
 16. The storage device according to claim 13, wherein the controller is further configured to generate the second parity data by performing an exclusive OR operation on the data that are written in the second memory cells in the second memory cell arrays of the nonvolatile memories.
 17. The storage device according to claim 13, further comprising: a volatile memory, wherein the controller maintains the parity data and the second parity data in the volatile memory.
 18. A method for operating a storage device including a plurality of nonvolatile memories each of which includes first memory cells connected to a first word line and second memory cells connected to a second word line that is adjacent to the first word line, the method comprising the steps of, in this order: maintaining parity data for data written in the first memory cells of the nonvolatile memories; and when carrying out data writing in the second memory cells connected to the second word line in a targeted nonvolatile memory, which is one of the plurality of nonvolatile memories, upon detecting a failure in the data writing therein, carrying out restoration of data that were written in the first memory cells of the targeted nonvolatile memory using the parity data.
 19. The method according to claim 18, wherein the restoration is carried out also using data that were written in the first memory cells of the plurality of nonvolatile memories other than the target nonvolatile memory.
 20. The method according to claim 18, further comprising: writing data restored through the restoration in memory cells connected to a third word line different from the first and second word lines in the target nonvolatile memory. 